Usually a MOSFET datasheet will specify its guaranteed max RdsON at a specified Vgs or over a range of Vgs. This is from the one in your question: Max RdsON is specified over a range of Vgs. This is important, when you drive a FET with a specific Vgs you must pick a. For lowest losses (heat), I would use standard 300V mosfets rather than SIC versions, reason being more readily available at a much lower cost and have a lower RDSon value. SIC types are all 600V and to get low on resistance cost a fortune, as you will probably blow some up in getting it working. A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. Drain-Source On-Resistance - RDS (on) What It Is: Drain-source on-resistance is the resistance between drain and source with a specified VGS applied to bias the device to the on-state. The measurement is made in the ohmic (i.e. Linear) region of the device. On the curve tracer the Collector Supply drives the drain and the Step Generator drives.
All PROFET™ sub-families offer protection against overload, overvoltage, short-circuit, excessive temperature, ground loss, power supply loss and Electrostatic Discharge (ESD). Additionally, depending on the applications they were designed for (automotive, industrial, consumer, transportation and commercial vehicles and more), the PROFET™ load switch subfamilies can also protect against dynamic overvoltage such as load dump and inductive load turn-off.
To answer all your needs in power switching, we designed several sub-families:
- PROFET™+2 12V, our latest product family and our best solution for current sensing. Designed for current from 1 to 21A, it offers one of the best accuracy for load monitoring (<5%) and design flexibility. Thanks for its tiny package (TSDSO-14), it insures a low power dissipation as well as space-saving on the PCB. PROFET™+2 is automotive qualified.
- Power PROFET™ is our solution for high-current applications, from 20 A to 40A. This integrated load switch family offers a high short circuit robustness as well as enhanced thermal capabilities thanks to its power package (DPAK, D²PAK and SSOP-24). Power PROFET™ is automotive qualified.
- PROFET™+ 12V drives current from 0.5A to 11A and diagnoses with current sense. It provides a high short circuit robustness and a load dump voltage of 42V. The whole product family is pin compatible, also with PROFET™+24V family. PROFET™+ 12V is automotive qualified.
- PROFET™+24V are designed to be used for trucks, buses, as well as construction & agriculture vehicles (CAV) in harsh environment. The scalable family (12 pin-compatible devices) offers comprehensive protection functions, very fast current sense diagnostic, an extended operating voltage range and high short-circuit robustness. PROFET™+ 24V is automotive qualified.
- Classic PROFET™ 12V is our most well-established and versatile family. With more than 20 years on the market, those power ICS have proven their technical advantages and benefits. Designed for currents from 0.5A to 20A, they have a low current limitation and a high-energy capability. They also operate on an extended voltage range and count not less than 6 different packages in the family. Classic PROFET™ 12V is automotive qualified.
- Classic PROFET™ 24V is the variation of the Classic PROFET™ but for 24V applications: commercial, agriculture and transport vehicles, ABS, fuel injection, etc. Additionally to the features and benefits of the 12V family, those integrated load switches also offer a high clamping voltage (up to 75V) and a high PWM capability (the highest: 100kHz). Available in 8 different packages, Classic PROFET™ 24V can drive up to 8 channels. Classic PROFET™ 24V is automotive qualified.
- Industrial PROFET™ were designed for targeting industrial applications. Due to their outstanding energy robustness, they are perfectly suitable for switching even higher inductive loads and driving relays. Their main application areas include high-voltage applications (VBAT up to 58 V), high-speed PWM applications (up to 1 kHz) and they are most notably capable of switching higher inductances smoothly. Industrial PROFET™ are also the perfect match for applications with long wiring or any other kind of inductive loads or applications with space constraints.
RDS(on) stands for “drain-source on resistance,” or the total resistance between the drain and source in a Metal Oxide Field Effect Transistor, or MOSFET when the MOSFET is “on.” RDS(on) is the basis for a maximum current rating of the MOSFET and is also associated with current loss. All things being equal, the lower the RDS(on), the better.
MOSFETs make perfect switching devices and are often used in power applications. Example applications for power MOSFETs include Switched Mode Power Supplies (SMPS), motor control, automotive, and in any application where a heavy-duty electronic switch is needed, such as a driver. Current flows between the n-channels when a gate-to-source voltage (VGS) is applied, otherwise the MOSFET behaves like a resistor. When VGS reaches the threshold voltage VGS(th), an inversion layer forms that enables current flow. The inversion layer becomes the conductive path (or channel) of the MOSFET between drain and source.
RDS(on), the total resistance in the path from source to drain, is made up of a series of resistances that traverses the path of current flow. RN is the source region’s diffusion resistance. RCH is the channel region’s resistance. RA is the resistance of an area called the accumulation region. RJ is the resistance of an area called the JFET region. RD is the drift region resistance and the most important factor in high-voltage MOSFETs. RS is the resistance of the substrate itself and can be ignored in high-voltage MOSFETs. However, in low voltage MOSFETs it can have a large effect on RDS(on). See Figure 2 of a vertical structure of a MOSFET and a series of resistances in series forms the total RDS(on) in the path of current flow from source to drain.
Besides these inherent structural contributors to RDS(on), imperfect contact between the source and drain metal and even the wiring that connects the die to the leads on the package can also contribute to RDS(on).[i] The latter can be identified as RWCML, or the total of the bond wire resistance, contact resistance, and the resistance of the lead frame.[ii]
RDS(on) increases with increasing temperature (this is also known as a positive temperature coefficient.) This is because of the mobility of the hole and electron decrease with increasing temperature.
Edson Mosfet -
Edson Mosfet Manual
RDS(on) is a function of temperature as defined by the following formula:
RDS(on) (T) = RDS(on) x (25°C) x (T/300)2.3, where T is absolute temperature.[i]
[i]AN-9010 MOSFET Basics. (2000). ON Semi Application Note, 1-17. Retrieved April 30, 2017.
[ii]IDAN0061 Power MOSFET Basics. Abdus Sattar, IXYS Corp. Retrieved April 30, 2017.